Publications

Peer-reviewed journal & conference papers

Shao-Kuan Li, Chin-Han Chung, You-Chen Weng, Chih-Yi Yang, Edward-Yi Chang, "Impact of Proton Irradiation on Quaternary InAlGaN/AlN/GaN Epitaxial Structure for LEO Satellite Applications," in Proc. 7th International Symposium on Frontiers in Materials Science, Hsinchu City, Taiwan, Jan. 21-24, 2024.

J. K. Sari, C. Huang, and C. Chung, "Radiation-Induced Multi-Level Cell Behavior in TaOx/NiO-based Resistive Random Access Memory," in Proc. Radia. Effects Devices Syst. (RADECS), Toulouse, France, Sept. 25-29, 2023.

H. B. C. Do, O. K. Prasad, T. T. Mai, C. Chung, "Study of nitrogen vacancy based hBN ReRAM using reactive sputtering," Japan Society of Applied Physics (JSAP), Waseda University, Kumamoto, Japan, Sept. 19-23, 2023.

P. Aggarwal, H. Sheoran, P. Bisht, O. K. Prasad, C. H. Chung, E. Y. Chang, and R. Singh, "Synthesis of a large area ReS2 thin film by CVD for in-depth investigation of resistive switching: effects of metal electrodes, channel width and noise behaviour," Nanoscale, vol. 15, no. 34, pp. 14109-14121, Aug. 2023.

Y. C. Weng, C. H. Chung, C. J. Ma, C. Y. Yang, Y. P. Lan, H. C. Kuo, and E. Y. Chang, "High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications," ECS Journal of Solid State Science and Technology, vol. 12, no. 7, pp. 075003, July 2023.

Chin-Han Chung, Chih Yi Yang, Cheng Jun Ma, Yu Wei, Yi-En Chang-Chien, and Edward Yi Chang, "Investigation of Robustness Against Radiation for GaN MIS-HEMT in Space," in Semiconforum 2023, virtual, June, 5,  2023.

O. K. Prasad, S. Chandrasekaran, C. H. Chung, K. Chang, and F. M. Simanjuntak, "Annealing induced cation diffusion in TaOx-based memristor and its compatibility for back-end-of-line post-processing,", Appl. Phys. Lett, vol. 233505, no.23, December 2022.

Chih Yi Yang, Jia Hong Wu, Chin-Han Chung, Jhan Yi You, Tzu Chieh Yu, Cheng Jun Ma, Ching Ting Lee, Daisuke Ueda, Heng Tung Hsu, and Edward Yi Chang, "Optimization of Forward and Reverse Electrical Characteristics of GaN-on-Si Schottky Barrier Diode Through Ladder-Shaped Hybrid Anode Engineering," in IEEE Transactions on Electron Devices, vol. 69, no. 12, pp. 6644-6649, Dec. 2022, doi: 10.1109/TED.2022.3217999.

AlexWeiss, John Fizferal Hardy, Jordan Beverly, Chao-Cheng Lin, Chang-Hsien Lin, Chih-Han Chung, Yao-Feng Chang, Divya Panchanathan, Jana Stoudermire, and Ying-Chen Chen, "Effect of γ irradiation on HfOx-based ReRAM with CMOS compatible materials for potential defect-free memory fabricated in LEO" 11th Annual International Space Station Research and Development Conference (2022) (Washington DC, July 25-28th)

Chih Yi Yang, Chin-Han Chung, Wei Yu, Cheng Jun Ma, Sih Rong Wu, Abhisek Dixit, Ching Ting Lee, and Edward Yi Chang, "A Comprehensive Study of Total Ionizing Dose effect on the electrical performance of the GaN MIS-HEMT," IEEE Trans. Dev. Mater. Rel., Jun. 2022, vol. 22, no. 2, pp. 276-281.

C. Chung, D. Kobayashi, and K. Hirose, "Understanding the difference in soft-error sensitivity of back-biased thin-BOX SOI SRAMs to space and terrestrial radiation," IEEE Trans. Dev. Mater. Rel., Dec. 2019, vol. 19, no. 4, pp. 751-756.

C. Chung, D. Kobayashi, and K. Hirose, "Resistance-based modeling for soft errors in SOI SRAMS caused by radiation-induced potential perturbation under the BOX," IEEE Trans. Dev. Mater. Rel., Dec. 2018, vol. 18, no. 4, pp. 574-582.

C. Chung, D. Kobayashi, and K. Hirose, "Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs: Difference between sensitivities to terrestrial and space radiation," in Proc. IEEE Int. Rel. Physics Symp. (IRPS), Mar. 2018, pp. 4C.3-1-4C.3-6.

C. Chung, D. Kobayashi, and K. Hirose, "Device simulation study on the physics of SOI devices in space-effects of galactic cosmic rays on a well structure under the buried oxide," Japan Society of Applied Physics (JSAP), Waseda University, Tokyo, Japan, paper 18p-A202-8, Mar. 17-20, 2018.

C. Chung, D. Kobayashi, and K. Hirose, "Mechanism behind long line-type MCUs in thin-BOX SOI SRAMs: Resistance-based modeling and countermeasure," in Proc. Radia. Effects Devices Syst. (RADECS), Geneva, Switzerland, Oct. 2017, paper C-4. 

C. Chung, D. Kobayashi, and K. Hirose, "Heavy ion generated current leading to long line-type soft errors in thin BOX SOI SRAMs," Japan Society of Applied Physics (JSAP), paper 8a-A411-4, Fukuoka, Japan, Sept. 5-9, 2017.