Manuscript Accepted by TDMR

Our most recent work titled "A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT" has been accepted by IEEE Transaction on Device and Materials Reliability and is available for viewing in the early access mode. This is a project Rad-Hard Lab has been working on in collaboration with Prof. Edward Chang's group for months, and we are thrilled to see our hard work bear fruit. 

We are also planning further investigation into the radiation response of GaN HEMTs, and will soon make another publication.