7th International Symposium on Frontiers in Materials Science

Rad-Hard Lab was honored to be invited to present our recent work on proton irradiation effects in GaN devices in the 7th International Symposium on Frontiers in Materials Science. The participants of FMS this year included some of the best researchers in the field of material science from the US, Eu, Japan, Korea, and many other countries. Our invited talk, titled "Impact of Proton Irradiation on Quaternary InAlGaN/GaN Epitaxial Structure for LEO Satellite Applications", was well received, and we would like to believe it sprouted interest in this field for the audience. We will present more result of the topic soon in the form of journal articles.